LSI arrays for space stations

Two approaches have been taken to study CCD's and some of their fundamental limitations. First a numerical analysis approach has been developed to solve the coupled transport and Poisson's equation for a thorough analysis of charge transfer in a CCD structure. The approach is formulated by treating the minority carriers as a surface distribution at the Si-SiO2 interface and setting up coupled difference equations for the charge and the potential. The SOR method is proposed for solving the two dimensional Poisson's equation for the potential. Methods are suggested for handling the discontinuities to improve convergence. Second, CCD shift registers were fabricated with parameters which should allow complete charge transfer independent of the transfer electrode gap width. A test instrument was designed and constructed which can be used to test this, or any similar, three phase CCD shift register

Computer simulation of impurity diffusion in silicon, part 1

The elementary classical models for idealized diffusion conditions are described, and the principles are then used in developing more realistic models. The practical models require some type of numerical analysis. The numerical techniques are outlined and details concerning their implementation are given. Some results are presented which were obtained with the computer programs implementing the numerical techniques with implicit and explicit methods. Special problems of impurity-rich interlayers forming between an oxide and silicon are considered. A set of computed curves for sheet resistance, junction depth, and oxide thickness for different diffusion schedules is included

Trends and techniques for space base electronics

A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time

Application of LSI to signal detection: The deltic DFPCC

The development of the DELTIC DFPCC serial mode signal processor is discussed. The processor is designed to detect in the presence of background noise a signal coded into the zero crossings of the waveform. The unique features of the DELTIC DFPCC include versatility in handling a variety of signals and relative simplicity in implementation. A theoretical performance model is presented which predicts the expected value of the output signal as a function of the input signal to noise ratio. Experimental results obtained with the prototype system, which was breadboarded with LSI, MSI and SSI components, are given. The device was compared with other LSI schemes for signal processing and it was concluded that the DELTIC DFPCC is simpler and in some cases more versatile than other systems. With established LSI technology, low frequency systems applicable to sonar and similar problems are feasible

Models of MOS and SOS devices

Quarterly report describes progress in three programs: dc sputtering machine for aluminum and aluminum alloys; two dimensional computer modeling of MOS transistors; and development of computer techniques for calculating redistribution diffusion of dopants in silicon on sapphire films

Trends in solid state electronics, part 2

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent

A study of trends and techniques for space base electronics

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized

CCD research

The fundamental problems encountered in designing, fabricating, and applying CCD's are reviewed. Investigations are described and results and conclusions are given for the following: (1) the development of design analyses employing computer aided techniques and their application to the design of a grapped structure; (2) the role of CCD's in applications to electronic functions, in particular, signal processing; (3) extending the CCD to silicon films on sapphire (SOS); and (4) all aluminum transfer structure with low noise input-output circuits. Related work on CCD imaging devices is summarized

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model